Sputter
Sputtering System
제품 특징
- Process Chamber Method : Depo-down(planar type)
- Base pressure : 1
- 10^(-7)
- Cathode 3 inch internal type : 3 sets.
- Substrate holder : Max. size is 2 inch 3ea(Rotation:30rpm) 3 step position control
제품 자료
다운로드 가능한 자료가 없습니다.
제품 상세 정보
| 항목 | 값 |
|---|---|
| connector | No |
| managed | No |
| overview order | 1 |
| product order | 1 |
| product spec | ● Process Chamber Method : Depo-down(planar type)
● Base pressure : 1 * 10^(-7) ● Cathode 3 inch internal type : 3 sets. ● Substrate holder : Max. size is 2 inch 3ea(Rotation:30rpm) 3 step position control ● Thickness uniformity : Guaranteed in 3'' dia ● Substrate heater : Max. temp 850°C(Resistive heater) ● Pumping system APC function : conductance adjustment valve ● RF bias and sputter etch for pre-cleaning are option ● Operation system : Semi auto control interface(PLC/PC base control) |
| quantity | 0 |
| reg date | 2017-02-27 11:16:31 |
| single | No |