Pulsed Laser Deposotion
Pulsed Laser Deposotion System
제품 특징
- Maximum substrate size : Can handle one 2-inch diameter substrate, or multiple small substrates per
- customer requirement
- Maximum substrate temperature : 950°C(in oxygen) for non-transparent substrates such as Silicon, and 850°C
- for transparent substrates(such as LaAlO3)
- Temperature uniformity : ± 3°C across 2-inch diameter Si substrate
제품 자료
다운로드 가능한 자료가 없습니다.
제품 상세 정보
| 항목 | 값 |
|---|---|
| connector | No |
| managed | No |
| overview order | 1 |
| product order | 1 |
| product spec | ● Maximum substrate size : Can handle one 2-inch diameter substrate, or multiple
small substrates per customer requirement ● Maximum substrate temperature : 950°C(in oxygen) for non-transparent substrates such as Silicon, and 850°C for transparent substrates(such as LaAlO3) ● Temperature uniformity : ± 3°C across 2-inch diameter Si substrate ● Operation Pressure Range : 5 X 10^(-7)Torr base to 300mTorr ● Target Carrousel : 4channel multi target holder ● Film Thickness Uniformity : ± 4% over 90% of a 30mm diameter substrate(5-inch throw) for a 500mm thick film using raster scan over a 1-inch diameter target ● Traget to Substrate(Throw) Distance : Variable from 2-inch to 4inch ● Nominal Angle of incidence of the laser beam on target : 45° ● Base Pressure of the Main Chamber : 5 X 10^(-8)Torr guaranteed, with system at room temperature without tergets in the chamber ● Operational Wavelengh : 248nm(KrF) or 193nm(ArF), others available on request |
| quantity | 0 |
| reg date | 2017-02-27 11:16:47 |
| single | No |